STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL

摘要

A fin structure includes an optional doped well, a disposable single crystalline semiconductor material portion, and a top semiconductor portion formed on a substrate. A disposable gate structure straddling the fin structure is formed, and end portions of the fin structure are removed to form end cavities. Doped semiconductor material portions are formed on sides of a stack of the disposable single crystalline semiconductor material portion and a channel region including the top semiconductor portion. The disposable single crystalline semiconductor material portion may be replaced with a dielectric material portion after removal of the disposable gate structure or after formation of the stack. The gate cavity is filled with a gate dielectric and a gate electrode. The channel region is stressed by the doped semiconductor material portions, and is electrically isolated from the substrate by the dielectric material portion.

主权项

1. A method of forming a semiconductor structure comprising:
forming a fin structure including a vertical stack of an upper portion of a semiconductor material layer, a single crystalline semiconductor material portion, a disposable single crystalline semiconductor material portion, and a top semiconductor portion; replacing end portions of said fin structure with doped semiconductor material portions that are epitaxially aligned to said single crystalline semiconductor material portion and said single crystalline channel portion; replacing a remainder of said disposable single crystalline semiconductor material portion with a dielectric material portion; and forming a gate structure straddling said single crystalline channel portion and said dielectric material portion, said gate structure including a gate dielectric and a gate electrode.