发明名称 |
DEVICE FOR NON-LINEAR SIGNAL CONVERSION BY FOUR-WAVE MIXING |
摘要 |
A device for non-linear conversion of first infrared signal into a second infrared signal with a wavelength that is less than that of the first infrared signal by means of four-wave mixing, which includes at least one portion of SiGe arranged on at least one first layer of material with a refractive index which is less than that of silicon, a germanium concentration in the portion of SiGe which varies continuously between a first value and a second value which is greater than the first value, in a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, and in which a summital part of the portion of SiGe where the germanium concentration is equal to the second value is in contact with a gas and/or a material with a refractive index which is less than that of the silicon. |
申请公布号 |
US2014376854(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201414307842 |
申请日期 |
2014.06.18 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT |
发明人 |
BRUN Mickael;LABEYE Pierre;NICOLETTI Sergio;BOGRIS Adonis;KAPSALIS Alexandros;SYVRIDIS Dimitri |
分类号 |
G02F1/35;G02B6/10 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
1. A device suitable for a non-linear conversion of a first infrared signal into a second infrared signal whose wavelength is less than that of the first infrared signal by four-wave mixing, comprising at least one portion of SiGe arranged on at least one first layer of material whose refractive index is less than that of silicon, wherein a germanium concentration in the portion of SiGe varies continuously between a first value and a second value which is greater than the first value, along a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, the first value corresponding to the germanium concentration of a face of the portion of SiGe facing the first layer, and in which a summital part of the portion of SiGe in which the germanium concentration is equal to the second value is in contact with a gas and/or a material whose refractive index is less than that of silicon. |
地址 |
Paris FR |