发明名称 DEVICE FOR NON-LINEAR SIGNAL CONVERSION BY FOUR-WAVE MIXING
摘要 A device for non-linear conversion of first infrared signal into a second infrared signal with a wavelength that is less than that of the first infrared signal by means of four-wave mixing, which includes at least one portion of SiGe arranged on at least one first layer of material with a refractive index which is less than that of silicon, a germanium concentration in the portion of SiGe which varies continuously between a first value and a second value which is greater than the first value, in a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, and in which a summital part of the portion of SiGe where the germanium concentration is equal to the second value is in contact with a gas and/or a material with a refractive index which is less than that of the silicon.
申请公布号 US2014376854(A1) 申请公布日期 2014.12.25
申请号 US201414307842 申请日期 2014.06.18
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 发明人 BRUN Mickael;LABEYE Pierre;NICOLETTI Sergio;BOGRIS Adonis;KAPSALIS Alexandros;SYVRIDIS Dimitri
分类号 G02F1/35;G02B6/10 主分类号 G02F1/35
代理机构 代理人
主权项 1. A device suitable for a non-linear conversion of a first infrared signal into a second infrared signal whose wavelength is less than that of the first infrared signal by four-wave mixing, comprising at least one portion of SiGe arranged on at least one first layer of material whose refractive index is less than that of silicon, wherein a germanium concentration in the portion of SiGe varies continuously between a first value and a second value which is greater than the first value, along a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, the first value corresponding to the germanium concentration of a face of the portion of SiGe facing the first layer, and in which a summital part of the portion of SiGe in which the germanium concentration is equal to the second value is in contact with a gas and/or a material whose refractive index is less than that of silicon.
地址 Paris FR