Structure of a Trench MOS Rectifier and Method of Forming the Same

摘要

A structure of trench MOS rectifier and a method of forming the same are disclosed including a plurality of trenches formed in the n− drift epitaxial layer, a plurality of MOS structure formed on the substrate either in discrete islands or in rows. Asides the MOS gates there are source regions formed under the mesas. A top metal served as an anode is then formed on the resulted front surface connecting the MOS gates and the adjacent source regions.

主权项

1. A trench rectifier device, comprising:
an n type lightly doped epitaxial layer on a heavily doped n type semiconductor substrate having a plurality of trenches formed in parallel therein and said trenches having a trench oxide layer formed on a bottom and sidewalls of said trenches; a first conductive poly-Si layer filled said trenches; a plurality of MOS gates having a stack of a second conductive poly-Si layer/a planar gate oxide layer formed on mesas in between said trenches; a plurality of source regions formed in said mesas; and a top metal layer formed over said MOS gates and said source regions.