BI-DIRECTIONAL GALLIUM NITRIDE SWITCH WITH SELF-MANAGED SUBSTRATE BIAS

摘要

A semiconductor device includes a bidirectional GaN FET formed on a non-insulating substrate. The semiconductor device further includes a first electrical clamp connected between the substrate and a first source/drain node of the bidirectional GaN FET, and a second electrical clamp connected between the substrate and a second source/drain node of the bidirectional GaN FET. The first clamp and the second clamp are configured to bias the substrate at a lower voltage level of an applied bias to the first source/drain node and an applied bias to the second source/drain node, within an offset voltage of the relevant clamp.

主权项

1. A semiconductor device, comprising:
a bidirectional gallium nitride field effect transistor (GaN FET) formed on III-N layers over a substrate, said substrate being non-insulating, said bidirectional GaN FET having a first source/drain node and a second source/drain node; a first clamp connected between said first source/drain node and said substrate; and a second clamp connected between said second source/drain node and said substrate.