发明名称 |
Four-Junction Quaternary Compound Solar Cell and Method Thereof |
摘要 |
A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell (100) with a first band gap, a lattice constant matching with the substrate on an InP grown substrate, forming a second subcell (200) with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer (600) with a third band gap bigger than the second band gap on the second subcell, forming a third subcell (300) with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell (400) with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on |
申请公布号 |
US2014373907(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201214374006 |
申请日期 |
2012.12.21 |
申请人 |
Xiamen Sanan Optoelectronics Technology Co., Ltd. |
发明人 |
Bi Jingfeng;Lin Guijiang;Liu Jianqing;Xiong Weiping;Song Minghui;Wang Liangjun;Ding Jie;Lin Zhidong |
分类号 |
H01L31/0725;H01L31/065;H01L31/18;H01L31/0304 |
主分类号 |
H01L31/0725 |
代理机构 |
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代理人 |
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主权项 |
1. A four-junction quaternary compound solar cell, comprising:
an InP growth substrate; a first subcell with a first band gap and a lattice constant matched with the substrate lattice that forms on the growth substrate; a second subcell with a second band gap larger than the first band gap and a lattice constant matched with the substrate lattice that forms on the first subcell; a graded buffer layer that forms on the second subcell with a third band gap larger than the second band gap. The component in this layer gradually changes and the lattice constant is gradually reduced along with the component change; a third subcell with a fourth band gap larger than the third band gap and a lattice constant less than those of the substrate and the first and second subcells that forms on the graded buffer layer; and a fourth subcell with a fifth band gap larger than the fourth band gap and a lattice constant matched with the third subcell lattice that forms on the third subcell; |
地址 |
Xiamen, FJ CN |