发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of executing reading of data by a current sense amplifier with high accuracy. ! SOLUTION: A semiconductor device comprises: first and second reference current generation unit generating reference currents; a current-mirror circuit generating a memory cell current; a switching circuit connecting the current-mirror circuit to the second reference current generation unit or connecting the current-mirror circuit to memory cells; and an amplifier unit having a first input terminal to which a potential at a first connection node between the current-mirror circuit and the first reference current generation unit is input, and having a second input terminal to which a potential at a second connection node between the current-mirror circuit and the switching circuit is input. The amplifier unit retains an offset voltage generated between the first and second connection nodes if the second reference current generation unit is connected to the current-mi
申请公布号 JP2014241181(A) 申请公布日期 2014.12.25
申请号 JP20130123687 申请日期 2013.06.12
申请人 MICRON TECHNOLOGY JAPAN INC 发明人 MATANO TATSUYA
分类号 G11C13/00 主分类号 G11C13/00
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