| 发明名称 |
Metallic Nanomesh |
| 摘要 |
A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate. |
| 申请公布号 |
US2014377579(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414298090 |
申请日期 |
2014.06.06 |
| 申请人 |
University of Houston System |
发明人 |
Ren Zhifeng;Sun Tianyi;Guo Chuanfei |
| 分类号 |
H01B5/00;H01B1/02;H01B13/00 |
主分类号 |
H01B5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nanomesh, comprising:
a sheet of nanowires, the nanowires comprising at least one conductive element; and
wherein the sheet is capable of stretching to 200% in at least one dimension and has a sheet resistance less than 300Ω/□. |
| 地址 |
Houston TX US |
