Composite Substrate Used For GaN Growth

摘要

The present application discloses a composite substrate used for GaN growth, comprising a thermally and electrically conductive layer (1) with a melting point greater than 1000° C. and a mono-crystalline GaN layer 2 (2) located on the thermally and electrically conductive layer (1). The thermally and electrically conductive layer (1) and the mono-crystalline GaN layer 2 (2) are bonded through a van der Waals force or a flexible medium layer (3). The composite substrate can further include a reflective layer (4) located at an inner side, a bottom part, or a bottom surface of the mono-crystalline GaN layer 2. In the disclosed composite substrate, iso-epitaxy required by GaN epitaxy is provided; crystalline quality is improved; and a vertical structure LED can be directly prepared. Further, a thin mono-crystalline GaN layer 2 greatly reduces cost, which is advantageous in applications.

主权项

1. A composite substrate used for GaN growth, comprising a thermally and electrically conductive layer and a GaN mono-crystalline layer located on the thermally and electrically conductive layer, wherein the melting point of the said thermally and electrically conductive layer is greater than 1000° C.