发明名称 SOLID-STATE IMAGING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of making an output property or a noise level of a pixel adjacent to a dummy photodiode closer to that of another pixel.SOLUTION: A solid-state imaging apparatus 1A comprises a light-receiving part 20, an unwanted carrier capturing part 30 and a vertical shift register 60. The unwanted carrier capturing part 30 includes carrier capturing areas DA-DAwhich are disposed for each row in an area between the light-receiving part 20 and the vertical shift register 60. Each of the carrier capturing areas DA-DAincludes a transistor and a photodiode. One end of the transistor is connected to the photodiode and the other end is connected to electric charge discharging wiring R. The electric charge discharging wiring Ris short-circuited to a reference potential line GND.
申请公布号 JP2014241490(A) 申请公布日期 2014.12.25
申请号 JP20130122910 申请日期 2013.06.11
申请人 HAMAMATSU PHOTONICS KK 发明人 FUJITA KAZUKI;KUSHIMA TATSUJI;MORI HARUMICHI
分类号 H04N5/365;H01L27/146;H04N5/32 主分类号 H04N5/365
代理机构 代理人
主权项
地址