发明名称 |
SOLID-STATE IMAGING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of making an output property or a noise level of a pixel adjacent to a dummy photodiode closer to that of another pixel.SOLUTION: A solid-state imaging apparatus 1A comprises a light-receiving part 20, an unwanted carrier capturing part 30 and a vertical shift register 60. The unwanted carrier capturing part 30 includes carrier capturing areas DA-DAwhich are disposed for each row in an area between the light-receiving part 20 and the vertical shift register 60. Each of the carrier capturing areas DA-DAincludes a transistor and a photodiode. One end of the transistor is connected to the photodiode and the other end is connected to electric charge discharging wiring R. The electric charge discharging wiring Ris short-circuited to a reference potential line GND. |
申请公布号 |
JP2014241490(A) |
申请公布日期 |
2014.12.25 |
申请号 |
JP20130122910 |
申请日期 |
2013.06.11 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
FUJITA KAZUKI;KUSHIMA TATSUJI;MORI HARUMICHI |
分类号 |
H04N5/365;H01L27/146;H04N5/32 |
主分类号 |
H04N5/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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