| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for power, capable of facilitating suppression of oscillatory phenomena of a current and a voltage occurring at reverse recovery operation while suppressing loss at conduction of a reflux diode and loss at transient operations, and of facilitating achievement of high density.SOLUTION: The semiconductor circuit 200 includes a reflux diode that performs equivalent operations to unipolar operations, and a capacitor 210 and a resistor 220 connected in parallel to the reflux diode. The semiconductor circuit 200 further includes a semiconductor substrate 11 that functions as at least a part of the resistor 220 and has a value of a resistor 220 at least larger than a resistor value included in the reflux diode, and a dielectric region 12 provided to have a larger surface area than a predetermined area on one major plane of the semiconductor substrate 11 in the predetermined area with the semiconductor substrate 11 serving as an electrode on one side of the capacitor 210. |
