| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes first and second memory cell regions adjacent to each other on a substrate. At least one active base and a shallow trench isolation may be sequentially laminated at a boundary between the first and second memory cell regions. First and second active fins are formed on respective sides of the shallow trench isolation, and the first and second active fins projecting from the active base. At least one deep trench isolation is formed on one side of the active base. |
| 申请公布号 |
US2014374828(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414281224 |
申请日期 |
2014.05.19 |
| 申请人 |
SONG Tae-Joong;PARK Jae-Ho;BAEK Kang-Hyun |
发明人 |
SONG Tae-Joong;PARK Jae-Ho;BAEK Kang-Hyun |
| 分类号 |
H01L27/088;H01L27/11;H01L27/12 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
first and second memory cell regions adjacent to each other on a substrate; at least one active base and a shallow trench isolation sequentially laminated at a boundary between the first and second memory cell regions; first and second active fins on respective sides of the shallow trench isolation, the first and second active fins projecting from the active base; and at least one deep trench isolation on one side of the active base. |
| 地址 |
Seongnam-si KR |
