发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes: a plurality of first channel columns including a plurality of first channel layers that are arranged in a direction and offset by their centers; a plurality of second channel columns alternately arranged with the plurality of first channel columns and having a plurality of second channel layers that are arranged in the direction and offset by their centers; first insulating layers and first conductive layers alternately stacked to surround the first channel layers; second insulating layers and second conductive layers stacked to surround the second channel layers; and spacers placed between the first channel columns and the second channel columns and interposed between the first conductive layers and the second conductive layers. |
申请公布号 |
US2014374810(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201314045243 |
申请日期 |
2013.10.03 |
申请人 |
SK hynix Inc. |
发明人 |
AHN Jung Ryul;LEE Yun Kyoung |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device comprising:
a plurality of first channel columns including a plurality of first channel layers that are arranged in a direction and offset by their centers; a plurality of second channel columns alternately arranged with the plurality of first channel columns and having a plurality of second channel layers that are arranged in the direction and offset by their centers; first insulating layers and first conductive layers alternately stacked to surround the first channel layers; second insulating layers and second conductive layers alternately stacked to surround the second channel layers; and spacers placed between the first channel columns and the second channel columns and interposed between the first conductive layers and the second conductive layers. |
地址 |
Icheon-si KR |