LIGHT EMITTING DIODE STRUCTURE

摘要

A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.

主权项

1. A light emitting diode structure, comprising:
a substrate; an LED element, comprising;
a first N-type semiconductor layer located on the substrate;a first lighting layer located on part of the first N-type semiconductor layer, wherein a remaining part of the first N-type semiconductor layer is exposed from the first lighting layer;a first P-type semiconductor layer located on the first lighting layer;a first transparent conductive layer covering the first P-type semiconductor layer;a first electrode located on the first transparent conductive layer; anda second electrode located on an uncovered part of the first N-type semiconductor layer; a reverse current protection element located on the substrate and surrounding the LED element, an insulation gap being defined between the LED element and the reverse current protection element, the reverse current protection element comprising:
a stack layer formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer, part of the second N-type semiconductor layer adjacent to the first electrode being exposed and not covered by the second lighting layer and the second P-type semiconductor layer;a first conductor located on the second P-type semiconductor layer adjacent to the second electrode; anda second conductor located on an exposed part of the second N-type semiconductor layer; a third conductor electrically connected to the first conductor and the second electrode; and a fourth conductor electrically connected to the second conductor and the first electrode, such that the LED element is reversely connected to the reverse current protection element in parallel.