RESISTIVE MEMORY WITH A STABILIZER

摘要

A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

主权项

1. A memory device comprising:
a first electrode; an insulating region defining a via, the via having a T-shaped cross-sectional area; a non-programmable stabilizer element lining the via; a resistive memory element positioned within the via and in physical contact with the first electrode and the non-programmable stabilizer element, the resistive memory element having the T-shaped cross-sectional area and is programmable to a crystalline phase and an amorphous phase; and wherein at least one physical dimension of the stabilizer element is based on an amorphous volume of the resistive memory element in the amorphous phase such that the maximum resistance of the stabilizer element is less than the maximum resistance of the resistive memory element.