发明名称 |
COOLING DEVICE INCLUDING ETCHED LATERAL MICROCHANNELS |
摘要 |
In some examples, a cooling system includes a silicon substrate defining a first trench, a second trench, and a plurality of channels extending between the first trench and the second trench. The silicon substrate may define a first surface and a second surface substantially opposite to and substantially parallel to the first surface, and each of the plurality of channels may extend substantially parallel to the surface of the silicon substrate. The cooling system also may include a microelectronic device comprising a heat-generating area. The microelectronic device may be attached to the first surface or the second surface of the silicon substrate. In some examples, the plurality of channels may be etched between the first trench and the second trench. |
申请公布号 |
US2014376183(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201313923070 |
申请日期 |
2013.06.20 |
申请人 |
Honeywell International Inc. |
发明人 |
Chang Steve |
分类号 |
H05K7/20;H05K3/06;H05K13/00 |
主分类号 |
H05K7/20 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
forming a first trench comprising a first sloped wall and a second sloped wall in a substrate; forming a second trench comprising a third sloped wall and a fourth sloped wall in the substrate, wherein the third sloped wall is adjacent to the second sloped wall; depositing a metal on the first sloped wall, the second sloped wall, and the third sloped wall; forming a plurality of apertures in the metal on the second sloped wall; and etching a plurality of channels extending between the second sloped wall and the third sloped wall. |
地址 |
Morristown NJ US |