| 发明名称 |
ELECTRICALLY-DRIVEN PHASE TRANSITIONS IN FUNCTIONAL OXIDE HETEROSTRUCTURES |
| 摘要 |
A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states. |
| 申请公布号 |
US2014375417(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201314373908 |
申请日期 |
2013.02.06 |
| 申请人 |
Zhou You;Yang Zheng;Ramanathan Shriram |
发明人 |
Zhou You;Yang Zheng;Ramanathan Shriram |
| 分类号 |
H01C7/10;H01C17/06;H01C7/18 |
主分类号 |
H01C7/10 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A system comprising:
a layer of a first functional material deposited on a component of the system, wherein the first functional material undergoes a phase transition at a first critical voltage; an insulating layer deposited upon the layer of first functional material; and a layer of a second functional material deposited on the insulating layer, wherein the second functional material undergoes a phase transition at a second critical voltage; wherein the insulating layer is configured to induce a stress on the layer so as to change the first critical voltage, so that the resistance of the system is tunable so as to allow the system to undergo multi-stage electrical switching of resistive states. |
| 地址 |
Cambridge MA US |
