发明名称 |
DEVICE HAVING REDUCED PAD PEELING DURING TENSILE STRESS TESTING AND A METHOD OF FORMING THEREOF |
摘要 |
The present disclosure relates to a method for forming a semiconductor device. The method includes forming a first aluminum pad layer on a metal layer, forming an adhesion layer on the first aluminum pad layer, etching the adhesion layer so as to form a patterned adhesion layer, and forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer. |
申请公布号 |
US2014374911(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201414256241 |
申请日期 |
2014.04.18 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
WANG Xinpeng;ZHANG Chenglong;HUANG Ruixuan |
分类号 |
H01L23/00;H01L21/768 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a semiconductor device, comprising:
forming a first aluminum pad layer on a metal layer; forming an adhesion layer on the first aluminum pad layer; etching the adhesion layer so as to form a patterned adhesion layer; and forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer. |
地址 |
Shanghai CN |