| 摘要 |
The invention relates to a method for fabricating a substrate, comprising the steps of providing a donor substrate with at least one free surface, performing an ion implantation at a predetermined depth of the donor substrate to form an in-depth predetermined splitting area inside the donor substrate, and is characterized in providing a layer of an adhesive, in particular an adhesive paste, over the at least one free surface of the donor substrate. The invention further relates to a semiconductor structure comprising a semiconductor layer, and a layer of a ceramic-based and/or a graphite-based and/or a metal-based adhesive provided on one main side of the semiconductor layer. |
