SOLID-STATE IMAGING DEVICE

摘要

According to one embodiment, a solid-state imaging device includes a pixel array unit having pixels in a matrix form to store charge obtained by photoelectric conversion; a reference voltage generation circuit configured to generate a reference voltage based on an inter-terminal voltage of a first capacitor; and a column ADC circuit configured to calculate an AD conversion value of a pixel signal read out from each of the pixels on the basis of a result of comparison between the pixel signal and the reference voltage, the first capacitor comprising:
a first nonlinear capacitance; and a second nonlinear capacitance connected in parallel with the first nonlinear capacitance to have a polarity opposite to that of the first nonlinear capacitance.

主权项

1. A solid-state imaging device comprising:
a pixel array unit having pixels in a matrix form to store charge obtained by photoelectric conversion; a reference voltage generation circuit configured to generate a reference voltage based on an inter-terminal voltage of a first capacitor; and a column ADC circuit configured to calculate an AD conversion value of a pixel signal read out from each of the pixels on the basis of a result of comparison between the pixel signal and the reference voltage, the first capacitor comprising: a first nonlinear capacitance; and a second nonlinear capacitance connected in parallel with the first nonlinear capacitance to have a polarity opposite to that of the first nonlinear capacitance.