| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing on-resistance and threshold voltage, and increasing withstand voltage.SOLUTION: A semiconductor device A1 comprises a first n-type semiconductor layer 11, a second n-type semiconductor layer 12, a p-type semiconductor layer 13, a trench 3, an insulating layer 5, a gate electrode 41, and an n-type semiconductor region 14. The p-type semiconductor layer 13 runs along the trench 3, and includes a channel region in contact with the second n-type semiconductor layer 12 and the n-type semiconductor region 14. The size of the channel region in a depth direction x is 0.1 to 0.5 μm. The channel region includes a high concentration part whose peak impurity concentration is about 1×10cm. |
