| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a group III nitride semiconductor crystal which enables production of group III nitride semiconductor crystals allowing easy peeling of a seed crystal and being excellent in crystallinity, a method of producing a GaN substrate and method of etching a group III nitride semiconductor.SOLUTION: A method of etching a group III nitride semiconductor comprises forming a mask layer 140 on the gallium surface of a GaN substrate G10 serving as a growth substrate, forming a protective film PF on the nitrogen surface of the GaN substrate G10 and forming a plurality of concave parts X11 formed from the mask layer 140 to the GaN substrate G10 to obtain a seed crystal T10, etching the seed crystal T10 in an Na molten liquid to form a concave part X12 exposed with a facet surface so as to obtain a seed crystal T11, putting the seed crystal T11, together with a raw material, into a crucible and raising the pressure and temperature so that a GaN layer 150 grows in the lateral direction and the upward direction from the surface 144 of the mask layer 140. |
