MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

An impurity layer is formed in a first region of a semiconductor substrate, a silicon layer is grown on the semiconductor substrate, a tunnel gate insulating film is formed on a first silicon layer of a second region, a first conductor layer is formed on the tunnel gate insulating film, a first silicon oxide film and a silicon nitride film are formed on a second silicon layer, in a reduced pressure state, oxygen and hydrogen are independently introduced into an oxidation furnace to expose the silicon nitride film to active species of the oxygen and active species of the hydrogen to thereby oxidize the silicon nitride film to form a second silicon oxide film, a gate insulating film is formed on the silicon layer of the first region, a second conductor layer is formed on the second silicon oxide film and on the gate insulating film, the second conductor layer and the first conductor layer of the second region are patterned to form a stack gate of a nonvolatile memory transistor, and the second conductor layer above the first region is patterned to form a gate electrode of an MIS-type transistor.

主权项

1. A manufacturing method of a semiconductor device, comprising:
forming an impurity layer in a semiconductor substrate, that includes a first region and a second region, of the first region; epitaxially growing a silicon layer on the semiconductor substrate of the first region and the second region after forming the impurity layer; forming a first silicon oxide film and a silicon nitride film above the semiconductor substrate after epitaxially growing the silicon layer; independently introducing oxygen and hydrogen into an oxidation furnace in a reduced pressure state and exposing the silicon nitride film to active species of the oxygen and active species of the hydrogen to oxidize the silicon nitride film to form a second silicon oxide film on the silicon nitride film; forming a first gate insulating film on the silicon layer of the first region; forming a first conductor layer on the second silicon oxide film and on the first gate insulating film; patterning the first conductor layer, the second silicon oxide film, the silicon nitride film and the first silicon oxide film and forming a stack gate of a nonvolatile memory transistor above the second region; and patterning the first conductor layer above the first region and forming a gate electrode of an MIS-type transistor.