METHOD OF FABRICATING A MAGNETIC TUNNEL JUNCTION DEVICE

摘要

The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.

主权项

1. A method for fabricating a semiconductor device comprising a magnetic tunnel junction (MTJ), comprising:
forming a first dielectric layer on a completed underlying semiconductor device, the first dielectric layer having an opening provided on an electrode contact; forming a first portion of a multi-layer MTJ structure in the opening; forming a spacer on part of the first portion of the multi-layer MTJ structure, the spacer exposing the first portion of the multi-layer MTJ structure on the bottom of the opening; and forming a second portion of a multi-layer MTJ structure on the first portion of the multi-layer MTJ structure and the spacer.