发明名称 ESD PROTECTION CIRCUIT CELL
摘要 A device includes a first bidirectional PNP circuit coupled to a first output of an communication circuit, and a second bidirectional PNP circuit coupling to a second output of the communication circuit. The first and second bi-direction PNP circuits have coupled outputs and a first breakdown voltage. A third bidirectional PNP circuit is coupled to ground via the coupled outputs of the first bidirectional PNP circuit and of the second bidirectional PNP circuit. The third bidirectional PNP circuit has a second breakdown voltage. In some arrangements, a sum of the first breakdown voltage and the second breakdown voltage exceeds 60 volts. The communication circuit can be an automotive application circuit for a serial automotive communication application. The first and second bidirectional transistor circuits can form a part of a cell of an integrated circuit having an isolation structure to sustain high voltage.
申请公布号 US2014376133(A1) 申请公布日期 2014.12.25
申请号 US201313921226 申请日期 2013.06.19
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 LIN Wan-Yen;LEE Jam-Wem
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项 1. A clamp circuit, comprising: an electrostatic discharge (ESD) network, comprising: a first bidirectional transistor circuit coupled to a first output of a communication circuit;a second bidirectional transistor circuit coupled to a second output of the communication circuit, the first and second bi-direction transistor circuits having coupled outputs and a first breakdown voltage; anda third bidirectional transistor circuit coupled to ground and arranged to receive the coupled outputs of the first bidirectional transistor circuit and of the second bidirectional transistor circuit, the third bidirectional transistor circuit having a second breakdown voltage.
地址 Hsin-Chu TW