| 摘要 |
This semiconductor device is configured such that a resistor (91a) for suppressing overvoltage is inserted between an input terminal and a drain of JFETs (81, 82), and the resistor (91a) is disposed on the JEFTs (81, 82). Furthermore, the resistor (91a) is continuously and integrally formed with a spiral high-withstand voltage high-resistive element (121a) that constitutes a resistive voltage dividing circuit. |
