发明名称 Positive resist compositions and patterning process
摘要 <p>A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R 1 is H or methyl, R 2 is an acid labile group, R 3 is CO 2 R 4 when X is CH 2 , R 3 is H or CO 2 R 4 when X is O, R 4 is a monovalent C 1 -C 20 hydrocarbon group, and m is 1 or 2.</p>
申请公布号 EP2081084(B1) 申请公布日期 2014.12.24
申请号 EP20090000570 申请日期 2009.01.16
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHSAWA, YOUICHI;KINSHO, TAKESHI;WATANABE, TAKERU
分类号 G03F7/004;G03F7/039 主分类号 G03F7/004
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