| 摘要 |
<p>Provided are an oxide thin-film transistor and a preparation method therefor. The oxide thin-film transistor is provided with a surface self-organization monomolecular layer (15) fixedly disposed on an exposed surface of an oxide semiconductor layer (13), the self-organization monomolecular layer (15) being obtained by treating the surface of the oxide semiconductor layer (13) with an organic solvent, an inorganic solvent, alkanethiol, alkyl or phenyl replaced triethoxysilane. The preparation method therefor comprises preparing a surface self-organization monomolecular layer (15) on an exposed surface of an oxide semiconductor layer (13) by spin-coating, dripping, or immersing, the self-organization monomolecular layer (15) being obtained by treating the surface of the oxide semiconductor layer (13) with an organic solvent, an inorganic solvent, alkanethiol, alkyl or phenyl replaced triethoxysilane. The oxide thin-film transistor of the present invention is desirable in stability, and the preparation method has a simple process and low cost.</p> |
