发明名称 |
Method of improving mechanical properties of semiconductor interconnects with nanoparticles |
摘要 |
In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric. |
申请公布号 |
GB2497485(B) |
申请公布日期 |
2014.12.24 |
申请号 |
GB20130005611 |
申请日期 |
2011.08.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JUNJING BAO;NAFTALI E LUSTIG;TIEN-JEN J CHENG |
分类号 |
H01L21/768;H01L21/02;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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