发明名称 ELECTRICALLY CONDUCTING STRUCTURE, MANUFACTURING METHOD THEREFOR, ELECTRONIC DEVICE, AND MANUFACTURING METHOD THEREFOR
摘要 Openings (26a) are formed in an insulating film (26) being used as a formation site; vertical, parallel carbon nanotubes (CNTs) (23) are formed; tip sections of said CNTs (23) are inserted into the aforementioned openings (26a); and with the exception of the tip sections inserted into the openings (26a), the CNTs (23) are cleared away. This design makes it possible to form high-quality CNTs inside openings in a formation site without depending on the base material, yielding a desired electrically conducting structure that exhibits high reliability.
申请公布号 WO2014203550(A1) 申请公布日期 2014.12.24
申请号 WO2014JP51773 申请日期 2014.01.28
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY 发明人 SATO, MOTONOBU
分类号 H01L21/768;C01B31/02;H01L21/28;H01L21/3205;H01L21/336;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L29/78 主分类号 H01L21/768
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