| 摘要 |
<p>An edge termination structure portion (3) includes a field plate with a double structure of an annular polysilicon field plate (7) and a metal field plate (9b). In addition, in the edge termination structure portion (3), a plurality of annular guard rings (4b) are provided in a surface layer of the front surface of the semiconductor substrate (1). The polysilicon field plates (7) are separately arranged on the inner circumferential side and the outer circumferential side of the guard ring (4b). Polysilicon bridges (8) that connect the polysilicon field plates (7) on the inner and outer circumferential sides are provided on at least one guard ring (4b) among the plurality of guard rings (4b) at a predetermined interval so as to be arranged over the entire circumference of the guard ring (4b). The metal field plate (9b) is provided on the guard ring (4b) in a corner portion (3-2) of the edge termination structure portion (3) and at least one guard ring (4b) in a straight portion (3-1) of the edge termination structure portion (3).</p> |
