发明名称 |
METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
摘要 |
<p>An object of the present invention is to obtain stable growth of SiC single crystals, particularly 4H-SiC single crystals with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000°C or lower. A raw material containing Si, Ti and Ni is charged into a crucible 1 made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible 1 into the solvent to obtain a melt 6. A SiC seed crystal substrate 8 is then brought into contact with the melt 6 such that SiC is supersaturated in the melt 6 in the vicinity of the surface of the SiC seed crystal substrate 8, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate 8.</p> |
申请公布号 |
EP2484815(B1) |
申请公布日期 |
2014.12.24 |
申请号 |
EP20100820359 |
申请日期 |
2010.09.15 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
RYO, MINA;YONEZAWA, YOSHIYUKI;SUZUKI, TAKESHI |
分类号 |
C30B29/36;C30B9/10;C30B17/00;C30B19/04 |
主分类号 |
C30B29/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|