发明名称 成膜装置
摘要 PROBLEM TO BE SOLVED: To provide a film forming device capable of reducing damage to a substrate layer by lowering discharge voltage in performing sputtering film formation.SOLUTION: The film forming device includes an AC power source unit 50 alternately supplying voltage on a pair of targets 21A, 21B, and thermions are emitted from a filament 41 in an AC dual-cathode sputtering method. A discharge voltage of a plasma is lowered by supplying the thermions in a region where the plasma is formed, so that damage applied to a substrate layer is reduced in performing sputtering film formation.
申请公布号 JP5646398(B2) 申请公布日期 2014.12.24
申请号 JP20110135374 申请日期 2011.06.17
申请人 住友重機械工業株式会社 发明人 岩田 寛;原 章文
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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