发明名称 面発光型半導体レーザおよび光伝送装置
摘要 PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of high-speed modulation. SOLUTION: A surface-emitting semiconductor laser 10 comprises: a light-emitting part 130 that is formed on a substrate 100 and emits laser beam in a perpendicular direction with the substrate; a light propagation part 140 that is formed on the substrate and propagates a part of the light emitted by the light-emitting part in a horizontal direction with the substrate; and a reflection part 150 that reflects the light propagated by the light propagation part on the light-emitting part. The light propagation part includes a trench 120 whose refractive index is lower than the refractive index of the light-emitting part and a slow light part 122 whose refractive index is higher than the refractive index of the trench disposed between the trench and the reflection part. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5645546(B2) 申请公布日期 2014.12.24
申请号 JP20100187242 申请日期 2010.08.24
申请人 发明人
分类号 H01S5/026;H01S5/183 主分类号 H01S5/026
代理机构 代理人
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