| 摘要 |
PROBLEM TO BE SOLVED: To increase a facing area between conductors and realize the increase of a capacitance value without deepening a hole or complicating the planar shape of the hole in a capacitor structure which composes a capacitor by placing conductors and a dielectric body in the hole provided on a silicon substrate. SOLUTION: A hole 20 has a closed bottom hole which opens at one main surface of a silicon substrate 10, and protrusions 21 formed by the silicon substrate 10 are provided in the hole 20. A bottom surface of the hole 20 is an uneven surface formed by the protrusions 21. On the bottom and side surfaces in the hole 20, a first conductor 31, a dielectric body 40, a second conductor 32 are sequentially laminated from the side of these surfaces, and the first conductor 31 and the dielectric body 40 have layer forms derived from the uneven surface formed by the protrusions 21. COPYRIGHT: (C)2012,JPO&INPIT |
