ＩＩＩ族窒化物半導体単結晶の製造方法,申请号JP20120062268-传众专利搜索

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发明名称	ＩＩＩ族窒化物半導体単結晶の製造方法
摘要
申请公布号	JP5644796(B2)	申请公布日期	2014.12.24
申请号	JP20120062268	申请日期	2012.03.19
申请人		发明人
分类号	C30B29/38;C30B19/12	主分类号	C30B29/38
代理机构		代理人
主权项
地址

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