发明名称 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS
摘要 Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.
申请公布号 EP2510550(A4) 申请公布日期 2014.12.24
申请号 EP20100836703 申请日期 2010.12.09
申请人 SOLEXEL, INC. 发明人 MOSLEHI, MEHRDAD M.;KAPUR, PAWAN;KRAMER, KARL-JOSEF;WANG, DAVID, XUAN-QI;SEUTTER, SEAN;RANA, VIRENDRA V.
分类号 H01L31/042;H01L31/0216 主分类号 H01L31/042
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