| 摘要 |
This gate drive circuit for a power semiconductor element is provided with a gate current limiting circuit (7), which has output thereof connected to a gate terminal (50) of a power semiconductor element (1), and limits a gate current of the power semiconductor element (1). The gate drive circuit has a configuration wherein: the power semiconductor element (1) is turned on by having, as input to the gate current limiting circuit (7), a first voltage supply (13) controlled by means of control signals; and switching is performed at predetermined timing after the power semiconductor element (1) is turned on such that a voltage at the gate terminal (50) of the power semiconductor element (1) is a voltage lower than that of the first voltage supply. |
