| 发明名称 |
GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS |
| 摘要 |
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics. |
| 申请公布号 |
EP2815423(A2) |
申请公布日期 |
2014.12.24 |
| 申请号 |
EP20130749940 |
申请日期 |
2013.02.12 |
| 申请人 |
QUNANO AB |
发明人 |
OHLSSON, JONAS;BJORK, MIKAEL |
| 分类号 |
H01L29/778;B82Y10/00;B82Y40/00;C30B29/38;C30B29/40;H01L21/02;H01L21/20;H01L27/02;H01L27/06;H01L27/08;H01L29/06;H01L29/10;H01L29/66;H01L29/861;H01L29/872 |
主分类号 |
H01L29/778 |
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