SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMING METHOD USING SAME

摘要

In this silicon carbide semiconductor film-forming apparatus, first to third gases are introduced into first to third separated chambers (41-43), respectively, through first to third introduction ports (31-33). The first and second gases are a Si material-containing gas and a C material-containing gas, and the third gas does not contain Si and C. The first and second gases are independently supplied to a growing space through first and second supply paths (41b, 42b) that extend from the first and second separated chambers, respectively. Furthermore, the third gas is introduced between the first and second gases through a third supply path (43b) from the third separated chamber.