| 摘要 |
The present invention provides a copolymer for a resist having good sensitivity when used as a copolymer for a resist, good profile of a resist pattern formed, good resistance with respect to dry etching when performing dry etching using a resist pattern as a mask, and restrained surface roughness of a pattern formed by performing a dry etching process of a substrate. The copolymer for a resist includes a constituting unit (1) based on a (meth)acrylic acid ester derivative having a cyclic hydrocarbon group such as an adamantine cycle, and at least two cyano groups combined with the cyclic hydrocarbon group, a constituting unit (2) having a lactone skeleton and a cross-linked structure, and a constituting unit (3) having an eliminating group by an acid. |
