| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element of high luminance intensity, and to provide a manufacturing method thereof. SOLUTION: The light-emitting element is provided with a clad layer/contact layer 4, comprising a first conductivity-type III-V nitride semiconductor, an active layer 5 comprising the III-V nitride semiconductor containing In which is formed on the contact layer 4, an undoped cap layer 6 formed on the active layer 5 and comprising the III-V nitride semiconductor, and a clad layer 7 formed on the cap layer 6 and comprising a second conductivity-type III-V nitride semiconductor. |
