| 摘要 |
The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor 1) comprises a channel layer 10 constituted by a semiconductor, ferromagnetic layers 20A, 20B formed on the channel layer 10, and tunneling layers 22A, 22B formed so as to be interposed between the channel layer 10 and ferromagnetic layers 20A, 20B, while the tunneling layers 22A, 22B are constituted by a material substituting a part of Mg in MgO with Zn. As a result of studies, the inventors observed a decrease in areal resistance in a tunnel material having substituted a part of Mg in MgO with Zn. Therefore, the tunneling layers 22A, 22B can lower their areal resistance when constructed by a material having substituted a part of Mg in MgO with Zn. |
