发明名称 |
GARNET-TYPE SINGLE CRYSTAL AND PRODUCTION METHOD THEREFOR |
摘要 |
[Problem] To provide: a garnet-type single crystal that has good quality and transparency as a result of cell growth that causes the cell composition thereof to become partially irregular being controlled; and a production method for the garnet-type single crystal. [Solution] A garnet-type single crystal that is grown by bringing a seed crystal into contact with a molten starting material in a crucible that is arranged within a chamber and rotating the seed crystal while raising the seed crystal, and that is characterized by being represented by the formula (Tb3-xScx)(Sc2-yAly)Al3O12-z (wherein 0.11 ≤ x ≤ 0.14 and 0.17 ≤ y ≤ 0.23). The garnet-type single crystal is grown by filling the crucible with a mixed powder that comprises 20.9-21.2 mol% of terbium oxide, 32.7-33.3 mol% of scandium oxide, and a remainder of aluminum oxide and unavoidable impurities, melting the mixed powder, and supplying nitrogen gas to within the chamber while setting the rotation speed of the seed crystal to 5-20 rpm and the raising speed of the crystal seed to 0.3-0.8 mm/h. |
申请公布号 |
WO2014203577(A1) |
申请公布日期 |
2014.12.24 |
申请号 |
WO2014JP57757 |
申请日期 |
2014.03.20 |
申请人 |
SUMITOMO METAL MINING CO., LTD |
发明人 |
MATSUI, MASAYOSHI;TATSUMIYA, KAZUKI;ISHIDA, FUMIAKI |
分类号 |
C30B29/28;C30B15/20 |
主分类号 |
C30B29/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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