AN INTEGRATED SENSOR DEVICE FOR CHARGE DETECTION

摘要

According to a first aspect of the present innovation there is provided a semiconductor based integrated sensor device comprising: a lateral insulating-gate field effect transistor (MOSFET) connected in series to the base of a vertical bipolar junction transistor (BJT) wherein the drain-drift-region of said MOSFET is part of the base-region of the BJT within the semiconductor substrate thus making electrical contact to the base of the BJT and the distance of the drain-drift-region of the MOSFET to the emitter of the BJT exceeds the vertical distance between the emitter and any buried layer, serving as collector, and the breakdown voltage of the device being determined by the BVCEO of the vertical BJT.