发明名称 |
In-Ce-O SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
摘要 |
[Problem] To provide: an In-Ce-O sputtering target having a suppressed occurrence of abnormal discharges and nodules over the long term despite containing Ce at an atom ratio Ce/(In+Ce) of 0.16-0.40 and that obtains a high-refraction film; and a method for producing the In-Ce-O sputtering target. [Solution] The In-Ce-O sputtering target is configured from an In-Ce-O oxide sintered body having indium oxide as the primary component and containing cerium, and is used when producing a transparent electrically conductive film having an index of refraction of at least 2.1. The target is characterized by the Ce content being 0.16-0.40 in terms of the atom ratio Ce/(In+Ce) and cerium oxide particles having a particle size of no greater than 5 μm being dispersed in the In-Ce-O oxide sintered body. |
申请公布号 |
WO2014203579(A1) |
申请公布日期 |
2014.12.24 |
申请号 |
WO2014JP58259 |
申请日期 |
2014.03.25 |
申请人 |
SUMITOMO METAL MINING CO., LTD |
发明人 |
SATO, KEIICHI |
分类号 |
C23C14/34;C04B35/00;C23C14/08 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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