| 摘要 |
In order to produce a MOS-type silicon carbide semiconductor device, a first heat treatment (oxynitriding) is performed (step (S3)) in an oxidizing atmosphere comprising an oxidized compound that contains nitrogen such as nitrous oxide or nitric monoxide, and a gate insulating film is subsequently formed on the front surface of a SiC epitaxial substrate by performing (step (S4)) a second heat treatment that includes hydrogen. Next, a gate electrode is formed (step (S5)), an inter-layer insulating film is formed (step (S6)), and a third heat treatment for thermal densification of the inter-layer insulating film is subsequently performed (step (S7)). Next, a contact metal is formed (step (8)) and a fourth heat treatment for forming a reaction layer of the contact metal and the silicon carbide semiconductor is subsequently performed (step (9)). The third and fourth heat treatments are performed under an inert gas atmosphere comprising a gas such as nitrogen, helium, or argon. Configuring in this manner makes it possible to provide a manufacturing method for a silicon carbide semiconductor device that exhibits normally-off characteristics and that is capable of reducing interface state density. |
