发明名称 PEC BIASING TECHNIQUE FOR LEDS
摘要 Each LED in an array of LEDs mounted on a submount wafer has at least a first semiconductor layer exposed and connected to a first electrode of each LED. The submount wafer has a first metal portion bonded to the first electrode of each LED for providing an energization current to each LED. The submount wafer also has a second metal portion running along and proximate to the first metal portion but not electrically connected to the first metal portion. The second metal portion may be interdigitated with the first metal portion. The second metal portion is connected to a bias voltage. When the wafer is immersed in an electrically conductive solution for electrochemical (EC) etching of the exposed first semiconductor layer, the solution electrically connects the second metal portion to the first metal portion for biasing the first semiconductor layer during the EC etching.
申请公布号 EP2628195(B1) 申请公布日期 2014.12.24
申请号 EP20110776558 申请日期 2011.10.10
申请人 KONINKLIJKE PHILIPS N.V. 发明人 WEI, YAJUN
分类号 H01L33/62;H01L25/16;H01L33/22 主分类号 H01L33/62
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