| 摘要 |
According to one embodiment, a solid-state image sensing device includes a pixel including a photoelectric conversion element, a signal detection unit, transistors, and a control signal selection circuit to select a control signal applied to the control signal line. The control signal selection circuit sets a potential of the control signal line at a first potential level while the pixel signal is read from the pixel, the control signal selection circuit sets the potential of the control signal line at a second potential level when the pixel is set in an unselected state, and the control signal selection circuit sets the potential of the control signal line at a third potential level after the pixel is set in the unselected state. |
