| 摘要 |
The present invention addresses the problem of providing: a manufacturing method for a SGT having a structure in which the upper section of a columnar semiconductor layer is made to function as an n-type semiconductor layer or a p-type semiconductor layer by the work function difference between a metal and a semiconductor, said manufacturing method being a gate-last process in which two masks are used to form a fin-shaped semiconductor layer, the columnar semiconductor layer, a gate electrode, and gate wiring; and a SGT structure that is obtained as a result of the manufacturing method. The abovementioned problem is solved by including: a step in which the fin-shaped semiconductor layer is formed on a semiconductor substrate and a first insulating film is formed therearound; a step in which a first dummy gate is formed; a step in which a second dummy gate is formed; a step in which a side wall comprising the insulating film is formed, a diffusion layer is formed, and a compound of a metal and a semiconductor is formed on the diffusion layer; a step in which the gate electrode and the gate wiring are formed; and a step in which a contact that connects the upper section of a metal side wall and the upper section of the columnar semiconductor layer is formed by forming a contact hole in the upper section of the columnar semiconductor layer, forming a metal side wall on a side wall of the upper section of the columnar semiconductor layer, and depositing a third metal. |
