| 摘要 |
<p>Method and apparatus for a tunable laser device. In one aspect, a tunable laser device comprises a first doped cladding layer on a semiconductor substrate, a first waveguide layer of essentially undoped piezoelectric material on a top surface of the first doped cladding layer, an active layer on the top surface of the first waveguide layer, a second waveguide layer of essentially undoped piezoelectric material on the top surface of the active layer, a longitudinal structure parallel to a longitudinal axis of the semiconductor device on a top surface of the second waveguide layer comprising a doped semiconductor material, and a longitudinal interdigitated transducer (IDT) formed on the top surface of the second waveguide layer or on the bottom surface of the first waveguide layer, the IDT extending longitudinally in a direction parallel to the longitudinal axis and being arranged to, in response to a signal from a signal generator, generate a surface acoustic wave (SAW) in a direction parallel to the longitudinal axis.</p> |
